This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3566, 2SK3566
Function: 900V, 2.5A, N-Channel MOSFET
Pacakge : TO-220 Type
Manufacturer: Toshiba
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Description
The K3566 is Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON resistance: RDS (ON)= 5.6Ω(typ.)
2. High forward transfer admittance: |Yfs| = 2.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 720 V)
4. Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Maximum Ratings (Ta =25°C)
0. Drain current : Id = 2.5 A
1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS =20 kΩ): VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc =25°C) : PD = 40 W
5. Single pulse avalanche energy : EAS = 216 mJ
6. Avalanche current : IAR = 2.5 A
7. Repetitive avalanche energy : EAR = 4 mJ
Applications:
1. Switching Regulator
