K3566 Datasheet – Vdss=900V, N Channel MOSFET – Toshiba

Part Number : K3566, 2SK3566

Description : Silicon N Channel MOSFET

Manufactures : Toshiba

Image
K3566 mosfet

Description

Switching Regulator Applications

1. Low drain-source ON resistance: RDS (ON)= 5.6Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 2.0 S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 720 V)

4.  Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3566 datasheet pinout

Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 900 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 900 V

3. Gate-source voltage :  VGSS =  ±30 V

4. Drain power dissipation (Tc =25°C)  : PD = 40 W

5. Single pulse avalanche energy : EAS = 216 mJ

6. Avalanche current : IAR = 2.5 A

7. Repetitive avalanche energy : EAR = 4 mJ

 

K3566 Datasheet