This is a kind of MOSFET.
Part Number : K3567
Function : Silicon N Channel MOS Type Field Effect Transistor.
Package : TO-220 Type
Manufacturers : Toshiba
Image :
Description :
1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 2.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 35 W
5. Single pulse avalanche energy : EAS = 201 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy : EAR = 3.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C
Applications
1. Switching Regulator
Other data sheets within the file : 2SK3567
K3567 Datasheet PDF Download
