K3567 MOSFET Transisor – Datasheet PDF

This is a kind of MOSFET.

Part Number : K3567

Function : Silicon N Channel MOS Type Field Effect Transistor.

Package : TO-220 Type

Manufacturers : Toshiba

Image :

K3567 datasheet

 

Description :

1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 2.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 35 W
5. Single pulse avalanche energy : EAS = 201 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy : EAR = 3.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

Applications

1. Switching Regulator

Other data sheets within the file : 2SK3567

K3567 Datasheet PDF Download


K3567 pdf