K3567 Datasheet – 600V, MOSFET – 2SK3567 (Transistor)

This post explains for the MOSFET K3567.

The Part Number is 2SK3567.

The function of this semiconductor is 600V, N-Channel MOSFET

Manufacturers : Toshiba Semiconductor

Images :

K3567 transistor mosfet

Description :

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Features

• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) […]

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pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 3.5 A
4. Drain power dissipation : PD = 35 W
5. Single pulse avalanche energy : Eas = 201 mJ
6. Avalanche curren : Iar = 3.5 A
7. Repetitive avalanche energy : Ear = 3.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

Applications :

Switching Regulator

K3567 Datasheet