This is one of the transistor types.
This part name is K3569, 2SK3569.
The function has N-Channel MOS Field Effect Transistor.
Manufacturers of product is Toshiba.
See the preview image and the PDF file for more information.
1. Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)
2. High forward transfer admittance: |Yfs| = 8.5S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout for K3569
Absolute Maximum Ratings (Ta =25°C)
1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 10 A
5. Drain power dissipation (Tc =25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 363 mJ
7. Avalanche current : IAR = 10 A
8. Channel temperature : Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C
1. Switching Regulator