K3569 Datasheet – Vdss=600V, Nch MOSFET Transistor – Toshiba

This is one of the transistor types.

This part name is K3569, 2SK3569.

This product has N Channel MOS Field Effect Transistor functions.

Manufacturers of product is Toshiba.

See the preview image and the PDF file for more information.

Image

K3569 MOSFET

 

Switching Regulator Applications

1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3569 datasheet

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

 

K3569 Datasheet