K3569 Datasheet – Vdss=600V, MOSFET Transistor – Toshiba

This is one of the transistor types.

This part name is K3569, 2SK3569.

The function has N-Channel MOS Field Effect Transistor.

Manufacturers of product is Toshiba.

See the preview image and the PDF file for more information.

Image

K3569 MOSFET

 

Features

1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout for K3569

K3569 datasheet

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

8. Channel temperature : Tch = 150 °C

9. Storage temperature range : Tstg = -55~150 °C

 

Applications

1. Switching Regulator

 

K3569 Datasheet