Part Number : K3569
Function : Silicon N Channel MOS FET
Manufacturers : Toshiba
Pinouts :
Description :
1. Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)
2. High forward transfer admittance: |Yfs| = 8.5S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 600 V)
4. Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
K3569 Datasheet PDF Download
Other data sheets within the file : 2SK3569, K3569
