K3667 Datasheet – 600V, N Channel MOSFET – Toshiba

Part Number : K3667, 2SK3667

Function :  N Channel MOSFET ( V dss, V dgr = 600V, Pd = 45 W )

Package : TO-220 Type

Manufactures : Toshiba

Image

K3667 image

Features

1. Low drain-source ON resistance: RDS (ON)= 0.75Ω(typ.)
2. High forward transfer admittance: |Yfs| = 5.5S (typ.)
3. Low leakage current: IDSS= 100μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K3667 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 7.5 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 189 mJ
6. Avalanche curren : Iar = 7.5 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

Applications

Switching Regulator

K3667 Datasheet