K3868 Datasheet – Vdss=500V, N-ch MOSFET – Toshiba

Part Number : K3868

Function : Silicon N-Channel MOSFET

Manufacturers : Toshiba

Image

K3868 mosfet

Description :

Switching Regulator Applications

1. Low drain-source ON resistance: RDS (ON)= 1.3 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3868 datasheet pinout

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 500 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 500 V

3. Gate-source voltage  : VGSS  = ±30 V

4. Drain current ( DC ) :  ID = 5A

5. Single pulse avalanche energy : Eas = 180 mJ

6. Avalanche current : IAR = 5 A

7. Repetitive avalanche energy  : EAR = 3.5 mJ

 

K3868 Datasheet

 

 

Other data sheets within the file : 2SK3868