Part Number : K3868
Function : Silicon N-Channel MOSFET
Manufacturers : Toshiba
Image
Description :
Switching Regulator Applications
1. Low drain-source ON resistance: RDS (ON)= 1.3 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 3 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 500 V)
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta =25°C)
1. Drain-source voltage : VDSS = 500 V
2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 500 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current ( DC ) : ID = 5A
5. Single pulse avalanche energy : Eas = 180 mJ
6. Avalanche current : IAR = 5 A
7. Repetitive avalanche energy : EAR = 3.5 mJ
K3868 Datasheet
Other data sheets within the file : 2SK3868