Part Number: K3878
Function: 900V, 9A, Silicon N-Channel MOSFET
Package: TO-3P type
Manufacturer: Toshiba
Image
Description
This is Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).
K3878 transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features for K3878
1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinouts
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C): PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ
9. Channel temperature: Tch = 150°C
Pinouts:
Application:
1. Switching Regulator
K3878 Datasheet
Other data sheets are available within the file: 2SK3878
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