K3878 Datasheet PDF – N-ch MOSFET – Toshiba

Part Number : K3878

Function : Field Effect Transistor

Package : TO-3P type

Manufacturers : Toshiba

Image

k3878-mosfet


Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

K3878 schematic
Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C) : PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ

Pinouts :
K3878 datasheet pinout

K3878 Datasheet

K3878 pdf

 

Other data sheets within the file : 2SK3878