K3878 Datasheet – 900V, N-ch, MOSFET

This post explains for the semiconductor K3878.

This is one of the MOSFET types. This is a kind of the transistor.

The Part Number is K3878.

The function of this semiconductor is 900V, Field Effect Transistor.

Manufacturers : Toshiba,

Iimages :

K3878 Datasheet

Pinout : 1. Gate  2. Dreain ( Heatsink )  3. Source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = 900 V
3. Drain current : ID = 9 A
4. Drain power dissipation : PD = 150 W
5. Single pulse avalanche energy : Eas = 778 mJ
6. Avalanche curren : Iar = 9 A
7. Repetitive avalanche energy : Ear = 15 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

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K3878 image

Description :

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)

 

Features

1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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pinout

Applications

: Switching Regulator

K3878 Datasheet