Part Number : K3911, 2SK3911
Function : Silicon N Channel MOS Type Field Effect Transistor
Package : TO-3P, SC-65 Type
Manufactures : Toshiba
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Description
1. Switching Regulator Applications
2. Small gate charge: Qg = 60 nC (typ.)
3. Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)
4. High forward transfer admittance: |Yfs| = 11 S (typ.)
5. Low leakage current: IDSS = 500 μA (VDS = 600 V)
6. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS=600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR=600 V
3. Gate-source voltage : VGSS=±30 V
4. Drain power dissipation (Tc = 25°C) : PD=150 W
5. Single pulse avalanche energy : EAS=792 mJ
6. Avalanche current : IAR=20 A
7. Repetitive avalanche energy : EAR=15 mJ
