K3911 Datasheet – N-Ch, Vdss=600V, MOSFET – Toshiba

Part Number : K3911, 2SK3911

Function : Silicon N Channel MOS Type Field Effect Transistor

Package : TO-3P, SC-65 Type

Manufactures : Toshiba

Image

k3911-mosfet-toshiba

 

Description

1. Switching Regulator Applications

2. Small gate charge: Qg = 60 nC (typ.)

3. Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)

4. High forward transfer admittance: |Yfs| = 11 S (typ.)

5. Low leakage current: IDSS = 500 μA (VDS = 600 V)

6. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

k3911-datasheet-pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS=600 V

2. Drain-gate voltage (RGS = 20 kΩ) : VDGR=600 V

3. Gate-source voltage : VGSS=±30 V

4. Drain power dissipation (Tc = 25°C) : PD=150 W

5. Single pulse avalanche energy : EAS=792 mJ

6. Avalanche current : IAR=20 A

7. Repetitive avalanche energy : EAR=15 mJ

 

K3911 Datasheet