Part Number : K3919, 2SK3919
Function : N-Channel Power MOSFET
Package : TO-251, TO-252 type
Manufactures : NEC
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A) • Low Ciss: Ciss = 2050 pF TYP. • 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±64 ±256 36 1.0 150 −55 to +150 27 73 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17078EJ4V0DS00 (4th edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SK3919 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 16 A VGS = 10 V, ID = 32 A VGS = 5.0 V, ID = 16 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.5 V, ID = 32 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±100 UNIT µA nA V S 2.0 9.7 2.5 19 4.5 6.8 2050 460 330 16 19 53 22 3.0 Drain to Source On-state Resistance 5.6 13.7 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 20 V VGS = 10 V ID = 64 A IF = 64 A, VGS = 0 V IF = 64 A, VGS = 0 V di/dt = 100 A/µs 42 8 15 0.97 23 11 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ […]