Part Number: IKW40N60H3, Marking : K40H603
Function: 600V, 40A, IGBT, Transistor
Package: TO-247 Type
Manufacturer: Infineon
Image
Description:
The K40H603 is 600V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
Features:
1. Very low VCEsat
2. Low EMI
3. Very soft, fast recovery anti-parallel diode
4. Maximum junction temperature 175°C
5. Qualified according to JEDEC for target applications
6. Pb-free lead plating; RoHS compliant
7. Complete product spectrum and PSpice Models:
Applications:
1. uninterruptible power supplies
2. welding converters
3. converters with high switching frequency
