Part Number: K4107, 2SK4107
Function : Vdss=500V, 15A, N-Channel MOSFET , Transistor
Manufacturer: Toshiba
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Description
This is 500V, 15A, Silicon N-Channel MOS Field Effect Transistor.
Features
1. Low drain−source ON resistance : RDS (ON)= 0. 33 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 8.5 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 500 V)
4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain−source voltage: VDSS = 500 V
2. Drain−gate voltage (RGS= 20 kΩ): VDGR = 500 V
3. Gate−source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 150 W
5. Single-pulse avalanche energy : EAS = 765 mJ
6. Avalanche current : IAR = 15 A
7. Repetitive avalanche energy : EAR = 15 mJ
Applications:
1. Switching Regulator
