K4108 Datasheet – 500V, N-Ch MOSFET – Toshiba

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : K4108, 2SK4108

Description : Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor

Package : TO-3P type

Manufactures : Toshiba

Image
K4108 mosfet


Description

1. Low drain−source ON resistance  : RDS (ON)= 0. 21Ω(typ.)
2. High forward transfer admittance  : |Yfs| = 14 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 500 V)
4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Applications

1. Switching Regulator

Pinout

K4108 datasheet pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain source voltage : VDSS = 500 V
2. Drain gate voltage (RGS = 20 kΩ) : VDGR = 500 V
3. Gate source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 150 W
5. Single-pulse avalanche energy : EAS = 960 mJ
6. Avalanche current : IAR = 20 A
7. Repetitive avalanche energy : EAR = 15 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

K4108 Datasheet