K4110 Datasheet – 600V, N-Ch MOSFET – 2SK4110 – Toshiba

K4110 is one of the semiconductor types.

The full part number is 2SK4110.

The function of this semiconductor is 600V, N Channel MOSFET.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

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K4110 datasheet image

Description :

Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current : DC (Note 1) ID = 6A,  Pulse (t = 1 ms) (Note 1)  IDP = 24 A
5. Drain power dissipation (Tc = 25°C) : PD = 40 W
6. Single pulse avalanche energy (Note 2) : EAS = 345 mJ
7. Avalanche current : IAR = 6 A
8. Repetitive avalanche energy (Note 3) : EAR = 4 mJ
9. Channel temperature : Tch = 150 °C
10. Storage temperature range : Tstg = -55 to 150 °C
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K4110 pdf pinout

K4110 Datasheet