K4111 Datasheet PDF – 600V, 10A, N-Ch, MOSFET – Toshiba

Part Number: K4111, 2SK4111

Function: 600V, 10A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image

K4111 mosfet

Description:

The K4111 is 600V, 10A, Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor.

In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features:

1. Low drain-source ON resistance: RDS (ON)= 0.54 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 8.5S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K4111 datasheet pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4111 Datasheet PDF

 

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