Part Number : K4115, 2SK4115
Description : Silicon N Channel MOSFET
Manufactures : Toshiba
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Description
Switching Regulator Applications
1. Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Maximum Ratings (Ta =25°C)
1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc =25°C) : PD = 150 W
5. Single pulse avalanche energy : EAS = 491 mJ
6. Avalanche current : IAR = 7 A
7. Repetitive avalanche energy : EAR = 15 mJ
