K4115 Datasheet – Vdss=900V, N Channel MOSFET – Toshiba

Part Number : K4115, 2SK4115

Description : Silicon N Channel MOSFET

Manufactures : Toshiba

Image

K4115 mosfet
Description

Switching Regulator Applications

1. Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K4115 datasheet pinout

 

Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 900 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 900 V

3. Gate-source voltage :  VGSS =  ±30 V

4. Drain power dissipation (Tc =25°C)  : PD = 150 W

5. Single pulse avalanche energy : EAS = 491 mJ

6. Avalanche current : IAR = 7 A

7. Repetitive avalanche energy : EAR = 15 mJ

 

K4115 Datasheet