K4A60DA Datasheet – 600V, N-Ch MOSFET – TK4A60DA

K4A60DA is one of the semiconductor types..

The full part number is TK4A60DA.

The function of this semiconductor is Silicon N Channel MOSFET.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

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K4A60DA datasheet image

Description :

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain current : DC (Note 1) ID = 3.5A,  Pulse (t = 1 ms) (Note 1) IDP = 14 A
4. Drain power dissipation (Tc = 25°C) : PD = 35 W
5. Single pulse avalanche energy (Note 2) : EAS = 158 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy (Note 3) : EAR = 3.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature range : Tstg = −55 to 150 °C
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K4A60DA pdf pinout

K4A60DA Datasheet