The K4A60DA is one of the MOSFET types.
The full part number is TK4A60DA.
The function of this semiconductor is 600V, N-Channel MOSFET.
The manufacturers of this product is Toshiba.
See the preview image and the PDF file for more information.
Preview images :
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Description:
This is 600V, 3.5A, Silicon N-Channel MOSFET.
Features:
1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
3. Low leakage current: IDSS = 10 μA (VDS = 600 V)
4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 600 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain current : DC (Note 1) ID = 3.5A, Pulse (t = 1 ms) (Note 1) IDP = 14 A
4. Drain power dissipation (Tc = 25°C): PD = 35 W
5. Single pulse avalanche energy (Note 2) : EAS = 158 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy (Note 3) : EAR = 3.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = −55 to 150 °C
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Applications:
1. Switching Regulator