K4B2G1646Q-BCK0 Datasheet – DDR3-1600 SDRAM – Samsung

Part Number : K4B2G1646Q-BCK0

Function : 2Gb Q-die DDR3 SDRAM

Package : 96FBGA Type

Manufactures : Samsung

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K4B2G1646Q-BCK0 ddr3 1600 sdram

Description

The 2Gb DDR3 SDRAM Q-die is organized as a 16Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .

 

Ordering Information

K4B2G1646Q-BCK0 ordering information

 

2Gb DDR3 Q-die Speed bins ( DDR3-1600, 11-11-11)

tCK(min) : 1.25 ns
CAS Latency : 11 nCK
tRCD(min) : 13.75 ns
tRP(min) : 13.75 ns
tRAS(min) : 35 ns
tRC(min) : 48.75 ns

 

Pinout

K4B2G1646Q-BCK0 datasheet pinout

 

K4B2G1646Q-BCK0 Datasheet