Part Number : K4B2G1646Q-BCK0
Function : 2Gb Q-die DDR3 SDRAM
Package : 96FBGA Type
Manufactures : Samsung
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Description
The 2Gb DDR3 SDRAM Q-die is organized as a 16Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .
Ordering Information
2Gb DDR3 Q-die Speed bins ( DDR3-1600, 11-11-11)
tCK(min) : 1.25 ns
CAS Latency : 11 nCK
tRCD(min) : 13.75 ns
tRP(min) : 13.75 ns
tRAS(min) : 35 ns
tRC(min) : 48.75 ns
Pinout
