K50H603 PDF – 600V, High Speed IGBT, Transistor

This post explains for the IGBT, transistor.

The IGBT is insulated-gate bipolar transistor.

The Part Number is K50H603. Full Part Name is IKW50N60H3.

The function of this semiconductor is 600V, 50A, IGBT.

The package is TO247-3 pin Type

Manufacturer: Infineon Technologies

K50H603 pinout and Images:

K50H603 IGBT Transistor


K50H603 is 600V, 50A, High Speed IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode.

1. Voltage Rating: The IGBT has a maximum voltage rating of 600 volts (V). This means it can handle a maximum voltage of 600V in its operating conditions without the risk of damage.

2. Current Rating: The IGBT has a maximum current rating of 50 amperes (A). This specifies the maximum continuous current that can flow through the IGBT without exceeding its current handling capacity.

3. High-Speed: The IGBT is characterized as high-speed, indicating it is optimized for fast switching applications. High-speed IGBTs are designed to minimize switching losses and achieve fast turn-on and turn-off times, allowing for efficient and high-frequency operation.

IGBTs are widely used in various power electronics applications, including motor drives, inverters, power supplies, and other systems requiring high-voltage and high-current control. They combine the advantages of MOSFETs (low on-resistance and fast switching) and bipolar transistors (high voltage handling) to provide efficient power switching and amplification.


• very low VCEsat

• low EMI

• Very soft, fast recovery anti-parallel diode

• maximum junction temperature 175°C

• qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

K50H603 pdf datasheet



• uninterruptible power supplies

• welding converters

• converters with high switching frequency


K50H603 PDF Datasheet