K6A60DR Datasheet – N-Ch, 600V, MOSFET ( TK6A60D )

Part Number : K6A60D, K6A60DR

Function : Switching Regulator

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

K6A60DR datasheet transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain peak current : ID(pulse) = 24 A
5. Drain power dissipation (Tc = 25°C) : Pd = 40 W
6. Avalanche current : IAR = 6 A
7. Repetitive avalanche energy : Ear = 4.0 mJ
8. Storage temperature : Tstg = +150 °C

Pinout

K6A60DR pinout mosfet

Features

1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 3.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Applications

Switching Regulator

K6A60D Datasheet


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