K80E08K3 Datasheet – N-Ch, 75V, MOSFET – Toshiba

Part Number : K80E08K3

Function : 75V, Silicon N Channel MOSFET

Package : TO-220 Type

Manufacturers : Toshiba

Pinouts :
K80E08K3 datasheet

Description :

1. Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅣ)

2. E-Bike/UPS/Inverter

 

Features ;

1. Low drain−source ON resistance  : RDS (ON)= 7.5 mΩ(typ.)

2. High forward transfer admittance  : |Yfs| = 135 S (typ.)

3. Low leakage current  : IDSS= 10 µA (max) (VDS= 75 V)

4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 75 V

2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 75 V

3. Gate−source voltage : VGSS = ±20 V

4. Drain power dissipation (Tc = 25°C) : PD = 200 W

5. Single pulse avalanche energy : EAS = 107 mJ

6. Avalanche current : IAR = 40 A

 

K80E08K3 Datasheet PDF

K80E08K3 pdf

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