Part Number: K80E08K3
Function: 75V, 80A, N-Channel MOSFET
Package : TO-220 Type
Manufacturer: Toshiba
Image and Pinouts:
Description
This is 75V, 80A, Silicon N-Channel MOS Type Field Effect Transistor.
Features ;
1. Low drain−source ON resistance : RDS (ON)= 7.5 mΩ(typ.)
2. High forward transfer admittance : |Yfs| = 135 S (typ.)
3. Low leakage current : IDSS= 10 µA (max) (VDS= 75 V)
4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings
1. Drain-source voltage: VDSS = 75 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 75 V
3. Gate-source voltage: VGSS = ±20 V
4. Drain power dissipation (Tc = 25°C): PD = 200 W
5. Single pulse avalanche energy : EAS = 107 mJ
6. Avalanche current : IAR = 40 A
7. Drain current: ID = 80 A
Applications:
1. E-Bike / UPS / Inverter
K80E08K3 Datasheet PDF
