K900 Datasheet – N-Channel Power MOSFET – Fuji

Part Number : K900

Description : N-Channel Silicon Power MOSFET

Package : TO-220AB

Manufactures : Fuji Electric

Image

K900 mosfet

Features

1. High speed switching
2. Low on-resistance
3. No secondary breakdown
4. Low driving power

Pinout

K900 pinout image

Applications

1. UPS
2. DC-DC Converters
3. General purpose power amplifier

Absolute maximum ratings ( Tc=25°C )

1. Drain-source voltage : Vdss = 250 V
2. Continuous drain current : Id = 12 A
3. Pulsed drain current : Id(puls) = 48 A
4. Max. Power Dissipation : Pd = 80 W
5. Junction Temperature : Tj = 150°C
6. Storage Temperatue : Tsg = -55 ~ +150°C

K900 Datasheet

K900 Datasheet

 

K900 pdf

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