K9F1G08U0E Datasheet – 1Gb E-die NAND Flash Memory – Toshiba

Part Number : K9F1G08U0E, K9F1G08U0E-S

Function : 1Gb E-die NAND Flash, Single-Level-Cell (1bit/cell)

Package : 48 Pin TSSOP,  TSOP1, 63FBGA Pin Type

Manufacturers : Samsung


K9F1G08U0E nand flash memory

General Description

Offered in 128Mx8bit, the K9F1G08U0E is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400s on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0E extended reliability by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.



K9F1G08U0E datasheet pinout

1. Voltage Supply
– 3.3V Device(K9F1G08U0E) : 2.7V ~ 3.6V

2. Organization
– Memory Cell Array : (128M + 4M) x 8bit
– Data Register : (2K + 64) x 8bit

3. Automatic Program and Erase
– Page Program : (2K + 64)Byte
– Block Erase : (128K + 4K)Byte

4. Page Read Operation
– Page Size : (2K + 64)Byte
– Random Read : 40s(Max.)
– Serial Access : 25ns(Min.)


K9F1G08U0E Datasheet


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