K9GAG08U0E Datasheet – 16Gb NAND Flash Memory – Samsung

Part Number : K9GAG08U0E (16Gb), K9LBG08U0E(32Gb), K9HCG08U1E(64Gb)

Function : 16Gb E-die NAND Flash – Multi-Level-Cell (2bit/cell)

Package : 48TSOP1 Type

Manufactures : Samsung

Image

k9gag08u0e-nand-flash-memory

Description

The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 1.2ms on the 8,628-byte page and an erase operation can be performed in typical 1.5ms on a (1M+54.5K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9GAG08U0E′s extended reliability of P/E cycles which are presented in the Qualification report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

 

Pinout

k9gag08u0e-datasheet-pinout

 

Features

1. Voltage Supply
– 3.3V Device : 2.7V ~ 3.6V

2. Organization
– Memory Cell Array : (2,076M x 110.49K) x 8bit
– Data Register : (8K + 436) x 8bit

3. Automatic Program and Erase
– Page Program : (8K + 436)Byte
– Block Erase : (1M + 54.5K)Byte

4. Page Read Operation
– Page Size : (8K + 436)Byte
– Random Read : 400μs(Max.)
– Serial Access : 30ns(Min.)

5. Memory Cell : 2bit / Memory Cell

6. Fast Write Cycle Time
– Program time : 1.2ms(Typ.)
– Block Erase Time : 1.5ms(Typ.)

 

K9GAG08U0E Datasheet