K9HBG08U1M Datasheet PDF

Part Number : K9HBG08U1M

Function : Advance FLASH MEMORY

Manufacturers : Samsung

Pinouts :

K9HBG08U1M datasheet

Description :

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Offered in 2Gx8bit the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective
solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 2112-byte
page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out
at 30ns(K9MCG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command
input. The on-chip write controller automates all program and erase functions including pulse repetition where required and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LAG08U0M′s extended
reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9LAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
An ultra high density solution having two 16Gb stacked with two chip selects is also available in standard TSOPI package.

K9HBG08U1M Datasheet PDF Download

K9HBG08U1M pdf

Other data sheets within the file :
K9HBG08U1M,K9HBG08U1M-I,K9HBG08U1M-P,K9LAG08U0M-P,K9MCG08U5M-P