Part Number : K9HBG08U1M
Function : 16G-bit NAND Flash Memory
Manufacturers : Samsung
2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Offered in 2Gx8bit the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 2112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns(K9MCG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition where required and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LAG08U0M′s extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 16Gb stacked with two chip selects is also available in standard TSOPI package.
Other data sheets within the file :
K9HBG08U1M-I, K9HBG08U1M-P, K9LAG08U0M-P, K9MCG08U5M-P