An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Part Number: KF6N60D, KF6N60I
Function: 600V, 5A, N-Ch, MOSFET
Package: DPAK Type
Manufacturer: KEC
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Description
KF6N60D is 600V, 5A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
Features
1. VDSS(Min.) = 600V, ID= 5A
2. RDS(ON) = 1.4 Ω(Max) @VGS =10V
3. Qg(typ.) = 16nC
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5 A
4. Drain Power Dissipation: Pd = 69.4 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C