Part Number: MDD1903
Function: 100V, 11A, Single N-channel Trench MOSFET
Package: D-Pak, TO-252 Type
The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications.
A 100V, 11A, Single N-channel trench MOSFET is a specific type of power MOSFET designed for switching and amplifying electrical signals in electronic circuits. Here are the key details about this type of MOSFET:
1. Voltage Rating: The MOSFET has a maximum voltage rating of 100 volts (V), which means it can withstand voltages up to 100V without breaking down or sustaining damage.
2. Current Rating: The MOSFET is rated to handle a maximum continuous drain current (ID) of 11 amperes (A). This specifies the maximum current that the MOSFET can safely carry under specified operating conditions.
1. VDS = 100V
2. ID = 11A @VGS = 10V
(1) < 120mΩ @VGS = 10V
(2) < 135mΩ @VGS = 6.0V
N-channel trench MOSFETs are commonly used in a wide range of applications, including power supplies, motor control, voltage regulation, and power switching circuits. They offer low on-resistance (RDS(on)) and fast switching characteristics, making them suitable for high-frequency and high-power applications.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 11 A
4. Power Dissipation: Pd = 39 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C