MDD2601 Datasheet – Nch Trench 30V MOSFET – Magnachip

Part Number: MDD2601

Function: N-channel MOSFET, 30V, 60.0A, 5.8mOhm

Package: TO-252 Type

Manufacturer: Magnachip

Image:

MDD2601 image


Description:

The MDD2061 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quailty. This MOSFET is suitable device for DC to DC converter and general purpose applications.

Features:

One advantage of the trench MOSFET design is that it allows for a larger surface area of the channel, which can increase the current-carrying capacity of the device. Additionally, the narrow trench can help reduce the device’s on-resistance, which is a measure of the resistance of the channel when the device is in the “on” state.

N-Channel Trench MOSFETs are commonly used in a variety of power electronic applications, such as switching power supplies, motor control circuits, and voltage regulators.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 10 V

3. Drain current : ID = 60 A

MDD2601 Datasheet

MDD2601 Datasheet

 

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