Part Number: MDD2601
Function: N-channel MOSFET, 30V, 60.0A, 5.8mOhm
Package: TO-252 Type
The MDD2061 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quailty. This MOSFET is suitable device for DC to DC converter and general purpose applications.
One advantage of the trench MOSFET design is that it allows for a larger surface area of the channel, which can increase the current-carrying capacity of the device. Additionally, the narrow trench can help reduce the device’s on-resistance, which is a measure of the resistance of the channel when the device is in the “on” state.
N-Channel Trench MOSFETs are commonly used in a variety of power electronic applications, such as switching power supplies, motor control circuits, and voltage regulators.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 10 V
3. Drain current : ID = 60 A