Part Number: MDD2601
Function: N-channel MOSFET, 30V, 60.0A, 5.8mOhm
Package: TO-252 Type
Manufacturer: Magnachip
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Description:
The MDD2061 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quailty. This MOSFET is suitable device for DC to DC converter and general purpose applications.
Features:
One advantage of the trench MOSFET design is that it allows for a larger surface area of the channel, which can increase the current-carrying capacity of the device. Additionally, the narrow trench can help reduce the device’s on-resistance, which is a measure of the resistance of the channel when the device is in the “on” state.
N-Channel Trench MOSFETs are commonly used in a variety of power electronic applications, such as switching power supplies, motor control circuits, and voltage regulators.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 10 V
3. Drain current : ID = 60 A
MDD2601 Datasheet
