MDD2601 Datasheet – Nch Trench 30V MOSFET – Magnachip

Part Number: MDD2601

Function: N-channel MOSFET, 30V, 60.0A, 5.8mOhm

Package: TO-252 Type

Manufacturer: Magnachip


MDD2601 image


The MDD2061 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quailty. This MOSFET is suitable device for DC to DC converter and general purpose applications.


One advantage of the trench MOSFET design is that it allows for a larger surface area of the channel, which can increase the current-carrying capacity of the device. Additionally, the narrow trench can help reduce the device’s on-resistance, which is a measure of the resistance of the channel when the device is in the “on” state.

N-Channel Trench MOSFETs are commonly used in a variety of power electronic applications, such as switching power supplies, motor control circuits, and voltage regulators.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 10 V

3. Drain current : ID = 60 A

MDD2601 Datasheet

MDD2601 Datasheet


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