Part Number : MG400J2YS50
Function : 600V, 400A, Silicon N Channel IGBT
Package : GTR Module
Manufacturers : Toshiba
Image :
Description :
This is 400A 600V, IGBT MODULE.
N-CH 600V 400A 9(2-109D1A), N CHANNEL IGBT
Features :
1. The Electrodes are isolated from case.
2. High input impedance
3. Includes a complete half bridge in one package.
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 600 V
2. Gate to emitter voltage : Vges = ± 20 V
3. Collector dissipation : Pc = 1800 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -40 to +150 °C
Applications :
1. HIGH POWER SWITCHING
2. MOTOR CONTROL
MG400J2YS50 Datasheet PDF Download
Other data sheets within the file : MG-400J2YS50