Part Number: MG400J2YS50
Function: 600V, 400A, Silicon N Channel IGBT
Package: GTR Module
Manufacturer: Toshiba
Image:
Description:
This is 400A 600V, IGBT MODULE.
N-CH 600V 400A 9(2-109D1A), N CHANNEL IGBT
Features:
1. The Electrodes are isolated from case.
2. High input impedance
3. Includes a complete half bridge in one package.
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector dissipation : Pc = 1800 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -40 to +150 °C
Applications:
1. HIGH POWER SWITCHING
2. MOTOR CONTROL
MG400J2YS50 Datasheet PDF Download
Other data sheets are available within the file: MG-400J2YS50