MG800J1US51 Datasheet PDF – 800A, 600V, IGBT – Toshiba

Part Number : MG800J1US51

Function : Silicon N-Channel IGBT Module

Package : Module Type

Manufacturers : Toshiba

Image and pinouts :

MG800J1US51 datasheet

 

Description :

1. 800A, 600V, IGBT
2. The electrodes are isolated from case.
3. High input impedance
4. Ehancement-Mode

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage : Vces = 600 V
3. Gate-Emitter Voltage : Vges = ± 20 V
4. Collector Current : Ic = 800 A
5. Total Dissipation : Pc = 2800 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -40 ~ +125°C

Applications

1. High Power Switching
2. Motor Control

Other data sheets within the file : MG800J1US51

MG800J1US51 Datasheet PDF Download


MG800J1US51 pdf

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