MRF555 Datasheet – NPN, RF Transistor

Part Number : MRF555

Function : RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR

Package : 317D-02 Type

Manufacturers : Microsemi Corporation

Pinouts :

MRF555 datasheet

Description :

Designed primarily for wideband large signal stages in the UHF frequency range.

Features

1. Specified @ 12.5 V, 470 MHz Characteristics

2. Output Power = 1.5 W

3. Minimum Gain = 11 dB

4. Efficiency 60% (Typ)

5. Cost Effective PowerMacro Package

6. Electroless Tin Plated Leads for Improved Solderability

MAXIMUM RATINGS

1. Collector–Emitter Voltage VCEO 16 Vdc
2. Collector–Base Voltage VCBO 36 Vdc
3. Emitter–Base Voltage VEBO 4.0 Vdc
4. Collector Current — Continuous IC 400 mAdc
5. Operating Junction Temperature TJ 150 °C

Other data sheets within the file :

2N2857, 2N3866A, 2N4427, 2N5109, 2N5179

MRF555 Datasheet PDF Download

MRF555 pdf