Part Number : MRF555
Function : RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR
Package : 317D-02 Type
Manufacturers : Microsemi Corporation
Pinouts :
Description :
Designed primarily for wideband large signal stages in the UHF frequency range.
Features
1. Specified @ 12.5 V, 470 MHz Characteristics
2. Output Power = 1.5 W
3. Minimum Gain = 11 dB
4. Efficiency 60% (Typ)
5. Cost Effective PowerMacro Package
6. Electroless Tin Plated Leads for Improved Solderability
MAXIMUM RATINGS
1. Collector–Emitter Voltage VCEO 16 Vdc
2. Collector–Base Voltage VCBO 36 Vdc
3. Emitter–Base Voltage VEBO 4.0 Vdc
4. Collector Current — Continuous IC 400 mAdc
5. Operating Junction Temperature TJ 150 °C
Other data sheets within the file :
2N2857, 2N3866A, 2N4427, 2N5109, 2N5179
MRF555 Datasheet PDF Download
