Part Number: NP100P06PDG
Function: P-Channel, 60V, MOS FIELD EFFECT TRANSISTOR
Package: TO-263 Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
(1) RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
(2)RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = m100 A
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 100 A
4. Single Avalanche Energy : Eas = 420 mJ
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
NP100P06PDG Datasheet PDF Download
Other data sheets are available within the file:
NP100P06, NP100P06PDG-E1-AY, NP100P06PDG-E2-AY
