NP100P06PDG Datasheet PDF – P-Ch, 60V, MOSFET

Part Number : NP100P06PDG

Function : P-Channel, 60V, MOS FIELD EFFECT TRANSISTOR

Package : TO-263 Type

Manufacturers : Renesas Electronics

Pinouts :

NP100P06PDG datasheet

 

Description :

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Super low on-state resistance

(1) RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)

(2)RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)

• High current rating: ID(DC) = m100 A

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = – 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 100 A

4. Single Avalanche Energy : Eas = 420 mJ

5. Channel temperature : Tch = 175 °C

6. Storage temperature : Tstg = -55 to +175 °C

 

NP100P06PDG Datasheet PDF Download


NP100P06PDG pdf

Other data sheets within the file :

NP100P06, NP100P06PDG-E1-AY, NP100P06PDG-E2-AY