P3055LDG PDF Datasheet – 25V, 12A, N-Ch, MOSFET

Part Number : P3055LDG

Function : 25V, 12A, N-Channel Mode Field Effect Transistor

Package : TO-252 Type

Manufactures : Niko

Images :

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Description :

P3055LDG is N-Channel Logic Level Enhancement Mode Field Effect Transistor. TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50m ID 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 12 8 45 60 3 48 20 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM A L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 75 UNITS °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 0.8 1.2 2.5 ±250 nA 25 250 µA V LIMITS UNIT MIN TYP MAX 1 AUG-17-2004 NIKO-SEM On-State Drain Current1 Drain-Source On-State Resistance1 N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LDG TO-252 (DPAK) Lead-Free 12 70 50 16 120 90 A m S ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 5V, ID = 12A VGS = 10V, ID = 12A VDS = 15V, ID = 12A DYNAMIC Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay  […]

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P3055LDG Datasheet