P55NF06 – STP55NF06

Part Number : P55NF06

Function : STP55NF06

Manufactures : ST Microelectronics

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STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications ■ Switching application Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. TAB 3 2 1 TO-220 TAB 3 1 D2PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STB55NF06 B55NF06 STP55NF06 P55NF06 STP55NF06FP P55NF06FP Package D²PAK TO-220 TO-220 Packaging Tape and reel Tube May 2012 This is information on a product in full production. Doc ID 7544 Rev 11 1/19 www.st.com 19 Contents Contents STB55NF06, STP55NF06, STP55NF06FP 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data . . 16 6 Revision history . . . 18 2/19 Doc ID 7544 Rev 11 STB55NF06, STP55NF06, STP55NF06FP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value TO-220, D2PAK TO-220FP VDS VGS ID ID IDM(2) Ptot EAS (3) dv/dt (4) Drain-source voltage Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Single pulse avalanche energy Peak diode recovery voltage slope 50 35 200 110 0.73 60 ± 20 340 7 50(1) 35(1) 200(1) 30 0.20 VISO Tstg Tj Insulation withstand voltage (DC) Storage temperature Max. operating junction temperature 2500 -55 to 175 1. Refer to soa for the max allowable current value on FP-type due to Rth value 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 °C, VDD = 30 V, ID =25 A 4. ISD ≤50 A, di/dt ≤400 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Unit V V A A A W W/°C mJ V/ns V °C Tab [...]

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P55NF06 Datasheet