Part Number: P6N60FI, STP6N60FI
Function: 600V, 3.8A, MOSFET
Package: ISOWATT 220 Type
Manufacturer: ST Microelectronics
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Description
This si N – CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR.
Featueres :
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 Applications s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM6 Min. 2 Typ. 3 1 Max. 4 1.2 2.4 Unit V Ω Ω A V GS = 10V I D = 3 A V GS = 10V I D = 3 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 3 A VGS = 0 Min. 2 Typ. 4.8 1150 160 75 1500 240 110 Max. Unit S pF pF pF 2/9 STP6N60FI ELECTRICAL CHARACTERISTIC […]
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