Part Number : P6NA60FI
Function : N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Package : TO-220, ISOWATT220 Type
Manufacturers : STMicroelectronics
Pinouts :
Description :
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.
Applications
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWERSUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
Absolute Maximum Ratings
1. Drain-source Voltage (VGS = 0) : VDS = 600 V
2. Drain-gate Voltage (RGS = 20 kW) : VDGR = 600 V
3. Gate-source Voltage : VGS = ± 30 V
4. Drain Current (continuous) at Tc = 25’C : ID = 3.9 A
5. Drain Current (continuous) at Tc = 100 ‘C : ID = 2.6 A
6. Total Dissipation at Tc = 25 C : Ptot = 45 W
Other data sheets within the file : P6NA60, TP6NA60, STP6NA60FI
P6NA60FI Datasheet PDF Download
