PA102FDG – P-Channel Logic Level Enhancement

Part Number : PA102FDG

Function : P-Channel Logic Level Enhancement

Manufactures : NIKO-SEM

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PA102FDG image

Description :

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG TO-252 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20 115m ID -10A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% 1 :GATE 2 :DRAIN 3 :SOURCE LIMITS -20 ±12 -10 -6.2 -24 25 9.6 -55 to 150 MAXIMUM 5 110 UNITS V V A W °C UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = -250µA -20 VDS = VGS, ID = -250µA -0.45 -0.8 VDS = 0V, VGS = ±12V VDS = -16V, VGS = 0V VDS = -13.2V, VGS = 0V, TJ = 125 °C V -1.2 ±100 nA -1 µA -10 ID(ON) RDS(ON) gfs VDS = -5V, VGS = -4.5V VGS = -2.5V, ID =-2A VGS = -4.5V, ID = -3A VDS = -5V, ID = -3A -24 A 124 180 m 93 115 4.4 S NOV-05-2004 1 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG TO-252 Lead-Free DYNAMIC Input Capacitance Output Capacitance Ciss Coss VGS = 0V, VDS = -6V, f = 1MHz 430 235 Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -3A VDD = -10V ID ≅ -1A, VGS = -5V, RG = 6 95 7.6 10 3.2 2 25 60 70 60 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS Pulsed Current3 ISM Forward Voltage1 VSD 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 . 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. IF = -10A, VGS = 0V -10 -24 -1.2 pF nC nS A V REMARK: THE PRODUCT MARKED WITH PA102FDG, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. NOV-05-2004 2 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG TO-252 Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 10 V GS= 0V 1 T A = 125° C -Is – Reverse Drain Current(A) 0.1 0.01 25° C -55° C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 -VSD – Body Diode Forward Voltage(V) 1.2 NOV-05-2004 3 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG TO-252 Lead-Free NOV-05-2004 4 NIKO-SEM P-Channel Logic Level Enhance […]

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PA102FDG Datasheet