Part Number : PBSS533PAS
Function : 30V, 3A, PNP low VCEsat (BISS) transistor
Package : SOT1061D Type
Manufacturers : NXP Semiconductors.
Image and Pinout :
Description :
PNP low V CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.
NPN complement: PBSS4330PAS
Features :
1. Low collector-emitter saturation voltage VCEsat
2. High collector current capability IC and ICM
3. High collector current gain (hFE) at high IC
4. High efficiency due to less heat generation
5. Reduced Printed-Circuit Board (PCB) area requirements
6. Leadless small SMD plastic package with soldarable side pads
7. Exposed heat sink for excellent thermal and electrical conductivity
Applications :
1. Loadswitch
2. Battery-driven devices
3. Power management
4. Charging circuits
5. Power switches (e.g. motors, fans)
PBSS533PAS Datasheet PDF Download
Other data sheets within the file : PBSS533