Part Number: PDTC115EE
Marking : 46
Function: NPN resistor-equipped transistors / R1 = 100 kOhm, R2 = 100 kOhm
Package: SOT-416 Type
Manufacturer: NXP Semiconductors.
Image and Pinouts:
This is NPN resistor equipped transistor.
1. Built-in bias resistors
2. Simplified circuit design
3. Reduction of component count
4. Reduced pick and place costs.
1. General purpose switching and amplification
2. Inverter and interface circuits
3. Circuit driver.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 50 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 10 V
4. Total Power Dissipation : Ptot = 150 mW
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -65 ~ +150°C
Ordering Information and package :
1. PDTC115EEF SOT490
2. PDTC115EK SOT346
3. PDTC115EM SOT883
4. PDTC115ES SOT54 (TO-92)
5. PDTC115ET SOT23
6. PDTC115EU SOT323
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
PDTC115EE Datasheet PDF Download
Other data sheets are available within the file:
PDTA115, PDTA115EEF, PDTA115EK, PDTA115EM, PDTA115ES