PDTC115EE Datasheet – NPN Resistor-equipped Transistor

Part Number : PDTC115EE

Marking : 46

Function : NPN resistor-equipped transistors / R1 = 100 kOhm, R2 = 100 kOhm

Package : SOT-416 Type

Manufacturers : NXP Semiconductors.

Image and Pinouts :

PDTC115EE datasheet

 

Description :

This is NPN resistor equipped transistor.

 

Features :

1. Built-in bias resistors
2. Simplified circuit design
3. Reduction of component count
4. Reduced pick and place costs.

Applications :

1. General purpose switching and amplification
2. Inverter and interface circuits
3. Circuit driver.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 50 V
2. Collector to Emitter Voltage : Vceo = 50 V
3. Emitter to Base Voltage : Vebo = 10 V
4. Total Power Dissipation : Ptot = 150 mW
5. Junction Temperature : Tj = 150°C
6. Storage Temperatue : Tsg = -65 ~ +150°C

 

Ordering Information and package :

1. PDTC115EEF SOT490
2. PDTC115EK SOT346
3. PDTC115EM SOT883
4. PDTC115ES SOT54 (TO-92)
5. PDTC115ET SOT23
6. PDTC115EU SOT323

 

 

• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.

 

PDTC115EE Datasheet PDF Download


PDTC115EE pdf

Other data sheets within the file :

PDTA115, PDTA115EEF, PDTA115EK, PDTA115EM, PDTA115ES