PHE13003AU Datasheet – Silicon Diffused Power Transistor – Philips

Part Number : PHE13003AU

Function : Silicon Diffused Power Transistor

Package : SOT533 type

Manufacturers : Philips Semiconductors, NXP Semiconductors

Description :

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Features

PHE13003AU datasheet pinout

 

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V – 700 V
VCBO Collector-Base voltage (open emitter) – 700 V
VCEO Collector-emitter voltage (open base) – 400 V
IC Collector current (DC) – 1.5 A
ICM Collector current peak value – 3 A
Ptot Total power dissipation Tmb £ 25 °C – 50 W
VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A – 1.0 V
hFE IC = 1.0 A; VCE = 5 V – 25
tfi Fall time (Inductive) IC = 1.0 A; IBON = 0.2 A – 150 ns

 

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