RJH30 Datasheet – N-Ch, 360V, IGBT (RJH30H1DPP-M0)

Part Number : RJH30

Function : 360V, 30A, Silicon N Channel IGBT

Package : TO-220FL Type

Manufacturers : Renesas Electronics

Image :

RJH30 datasheet

 

Description :

1. Trench gate and thin wafer technology (G6H-II series),

2. High speed switching: tr =80 ns typ., tf = 150 ns typ.,

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

 

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 20 W

6. Channel temperature : Tch = 150 °C

7. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High speed power switching

Other data sheets within the file : RJH-30, RJH30H1DPP-M0

 

RJH30 Datasheet PDF Download


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