RJH30H1DPP-M0-T2 Datasheet – 360V, 30A, IGBT

Part Number : RJH30H1DPP-M0-T2

Function : 360V, 30A, N-Channel IGBT

Package : TO-220FL type

Manufacturers : Renesas Electronics

Image and Pinouts :

RJH30H1DPP-M0-T2 datasheet

 

Description :

This is a 360V, Silicon N Channel IGBT.

Features :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr =80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

5. Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.

6. Isolated package: TO-220FL

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 360 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 30 A

4. Collector dissipation : Pc = 20 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High speed power switching

RJH30H1DPP-M0-T2 Datasheet PDF Download


RJH30H1DPP-M0-T2 pdf

Other data sheets within the file : RJH30H1DPP, RJH30H1DPP-M0, RJH30H1