Part Number: RJH30H1DPP-M0-T2
Function: 360V, 30A, N-Channel IGBT
Package: TO-220FL type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description:
This is a 360V, Silicon N Channel IGBT.
Features:
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr =80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 A max.
5. Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.
6. Isolated package: TO-220FL
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 360 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 30 A
4. Collector dissipation : Pc = 20 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High speed power switching
RJH30H1DPP-M0-T2 Datasheet PDF Download
Other data sheets are available within the file: RJH30H1DPP, RJH30H1DPP-M0, RJH30H1