RJH30H1DPP-M0-T2 Datasheet PDF

Part Number : RJH30H1DPP-M0-T2

Function : Silicon N Channel IGBT High speed power switching

Manufacturers : Renesas Electronics

Pinouts :

RJH30H1DPP-M0-T2 datasheet

Description :

– Trench gate and thin wafer technology (G6H-II series)

– High speed switching: tr =80 ns typ., tf = 150 ns typ.

– Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

– Low leak current: ICES= 1 A max.

– Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.

– Isolated package: TO-220FL
 

RJH30H1DPP-M0-T2 Datasheet PDF Download

RJH30H1DPP-M0-T2 pdf

Other data sheets within the file :
RJH30H1DPP,RJH30H1DPP-M0,RJH30H1DPP-M0-T2