Part Number: RJH30H2DPK-M0
Function: 360V, 35A, N-Channel IGBT
Package: TO-3PSG Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description:
This is 360V, Silicon N-Channel IGBT. The IGBT is insulated-gate bipolar transistor.
Features:
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
3. High speed switching: tr = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES= 1 uA max
5. Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 360 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
RJH30H2DPK-M0 Datasheet PDF Download
Other data sheets are available within the file: RJH30H2, RJH30H2DPK