Part Number : RJH30H2DPK-M0
Function : 360V, 35A, IGBT
Package : TO-3PSG Type
Manufacturers : Renesas Electronics
Image and Pinouts :
Description :
This is 360V, Silicon N Channel IGBT.
Features :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
3. High speed switching: tr = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES= 1 uA max
5. Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 360 V
2. Gate to emitter voltage : Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
1. High Speed Power Switching
RJH30H2DPK-M0 Datasheet PDF Download
Other data sheets within the file : RJH30H2, RJH30H2DPK