RJH30H2DPK-M0 Datasheet PDF

Part Number : RJH30H2DPK-M0

Function : High Speed Power Switching

Manufacturers : Renesas Electronics

Pinouts :

RJH30H2DPK-M0 datasheet

Description :

– Trench gate and thin wafer technology (G6H-II series)

– Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

– High speed switching: tr = 100 ns typ, tf = 180 ns typ

– Low leak current: ICES= 1 uA max

*  Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ

Datasheet PDF Download

RJH30H2DPK-M0 pdf

Other data sheets within the file :
RJH30H2DPK-M0