RJH30H2DPK-M0 Datasheet PDF – 360V, N-Ch, IGBT

Part Number : RJH30H2DPK-M0

Function : 360V, 35A, IGBT

Package : TO-3PSG Type

Manufacturers : Renesas Electronics

Image and Pinouts :

RJH30H2DPK-M0 datasheet

 

Description :

This is 360V, Silicon N Channel IGBT.

Features :

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

3. High speed switching: tr = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES= 1 uA max

5. Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 360 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High Speed Power Switching

 

RJH30H2DPK-M0 Datasheet PDF Download


RJH30H2DPK-M0 pdf

Other data sheets within the file : RJH30H2, RJH30H2DPK