Part Number : RJH30H2DPK-M0
Function : High Speed Power Switching
Manufacturers : Renesas Electronics
Pinouts :
Description :
– Trench gate and thin wafer technology (G6H-II series)
– Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
– High speed switching: tr = 100 ns typ, tf = 180 ns typ
– Low leak current: ICES= 1 uA max
* Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ
Datasheet PDF Download
Other data sheets within the file :
RJH30H2DPK-M0