Part Number: RJH60F5DPQ-A0
Function: 600V – 40A – IGBT, High Speed Power Switching
Package: TO-247A type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description:
This is 600V, 40A, IGBT.
Features:
1. Low collector to emitter saturation voltage :
Vce(sat)= 1.37 V typ. (Ic= 40A, Vge= 15 V, Ta = 25°C)
2. Built in fast recovery diode in one package
3. Trench gate and thin wafer technology
4. High speed switching :
tr= 85 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : ID = 80 A (Tc = 25°C)
4. Collector dissipation : PC = 260.4 W
5. Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
RJH60F5DPQ-A0 Datasheet PDF Download
Other data sheets are available within the file: RJH60F5, RJH60F5DPQ-A0, RJH60F5DPQ-A0-T0