RJH60F7ADPK Datasheet PDF – 600V, IGBT

Part Number : RJH60F7ADPK

Function : 600V, N-Channel IGBT

Package : TO-3P Type

Manufacturers : Renesas Electronics

Image and Pinouts :

RJH60F7ADPK datasheet

 

Description :

This is 600V, Silicon N-Channel IGBT.

Features :

1. Low collector to emitter saturation voltage

2. Built in fast recovery diode in one package

3. Trench gate and thin wafer technology

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 600 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 90 A

4. Collector dissipation : Pc = 328.9 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. High Speed Power Switching

RJH60F7ADPK Datasheet PDF Download


RJH60F7ADPK pdf

Other data sheets within the file : RJH60F7A, RJH60F7ADPK-00-T0