Part Number: RJH60F7ADPK
Function: 600V, 90A, Silicon N Channel IGBT
Package: TO-3P Type
Manufacturer: Renesas Technology
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Description
RJH60F7ADPK is Silicon N Channel IGBT, High Speed Power Switching
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 90 A
4. Collector dissipation : Pc = 328.9 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature […]
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