RJP3045 Datasheet PDF – 360V, 35A, N-ch, IGBT – Renesas

Part Number: RJP3045, RJP3045DPP

Function: 360V, 35A, 25W, N-Channel IGBT

Package: TO-220FP Type

Manufacturer: Renesas, HITACHI

Image:

RJP3045 Datasheet

Description

The RJP3045 is 360V, 35A, 25W, Silicon N Channel IGBT.

The IGBT is insulated-gate bipolar transistor.

 

Features

1. Trench gate technology (G5H series)

2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ

3. High speed switching tf = 150 ns typ

4. Low leak current ICES = 1 μA max

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP3045 Datasheet PDF

RJP30E2DPP-M0 Datasheet

RJP30E2DPP-M0 pdf

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