RJP3045 Datasheet – 360V, 35A, N-ch, IGBT – Renesas

Part Number : RJP3045, RJP3045DPP

Function : N Channel IGBT, 360V, 35A i 150ns

Package : TO-220FP Type

Manufactures : Renesas, HITACHI

Image :

RJP3045 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A

Features

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES = 1 μA max

 

RJP3045 Datasheet PDF

RJP30E2DPP-M0 Datasheet

RJP30E2DPP-M0 pdf

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