Part Number: RJP3045, RJP3045DPP
Function: 360V, 35A, 25W, N-Channel IGBT
Package: TO-220FP Type
Manufacturer: Renesas, HITACHI
Image:
Description
The RJP3045 is 360V, 35A, 25W, Silicon N Channel IGBT.
The IGBT is insulated-gate bipolar transistor.
Features
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES = 1 μA max
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
RJP3045 Datasheet PDF
RJP30E2DPP-M0 Datasheet
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