This is one of the semiconductor types.
Part Number : RJP30E2, RJP30E2DPK-M0
This product has Silicon N Ch 360V IGBT High Speed Power Switching functions.
Package : TO-220FL
Manufacturers of product is Renesas Electronics.
See the preview image and the PDF file for more information.
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES= 1 μA max
RJP30E2 Datasheet PDF
Other data sheets within the file : RJP30E2DPK-M0, RJP30E2DPK-M0-T0