RJP30E2 Datasheet, RJP30E2DPK-M0 PDF – 360V IGBT

This is one of the semiconductor types.

Part Number : RJP30E2, RJP30E2DPK-M0

This product has Silicon N Ch 360V IGBT High Speed Power Switching functions.

Package : TO-220FL

Manufacturers of product is Renesas Electronics.

See the preview image and the PDF file for more information.

Pinouts :
RJP30E2

Description :

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max

RJP30E2 Datasheet

RJP30E2 Datasheet PDF

RJP30E2DPK-M0 pdf

Other data sheets within the file : RJP30E2DPK-M0, RJP30E2DPK-M0-T0