RJP30E2DPK-M0 Datasheet PDF

Part Number : RJP30E2DPK-M0
Function : Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ
Manufacturers : Renesas Electronics

Pinouts :
RJP30E2DPK-M0 datasheet

Description :

* Trench gate technology (G5H series)
* Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
* High speed switching  tf = 150 ns typ
* Low leak current  ICES= 1 μA max

Datasheet PDF Download

RJP30E2DPK-M0 pdf

Other data sheets within the file : RJP30E2DPK-M0,RJP30E2DPK-M0-T0