RJP30E2DPK-M0 Datasheet PDF – 360V, N-Channel IGBT

Part Number : RJP30E2DPK-M0

Function : 360V, Silicon N Channel IGBT

Package : TO-3PSG

Manufacturers : Renesas Electronics

Pinouts :
RJP30E2DPK-M0 datasheet

Description :

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max
5. High Speed Power Switching / Vce(sat) = 1.7V typ

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 50 W

Other data sheets within the file : RJP30E2DPK-M0-T0

RJP30E2DPK-M0 Datasheet PDF Download

RJP30E2DPK-M0 pdf